2020
G. Veber, C. S. Diercks, C. Rogers, W. S. Perkins, J. Ciston, A. Liebman-Palaez, C. Zhu, F. R. Fischer, “Reticular Growth of Graphene Nanoribbon 2D Covalent Organic Frameworks,” ChemRxiv, Feb 2020. doi:10.1016/j.chempr.2020.01.022.
P.-C. Shen, C. Lin, K. H. Teo, and J. Kong, “Ferroelectric Memory Field-effect Transistors using CVD Monolayer MoS2 as Resistive Switching Channel,” Applied Physics Letters, vol. 116, no 3, pp. 033501, Jan 2020. doi:10.1063/1.5129963.
D. Toledo, B. Navarrete, M. Stone, K. Luongo, P. Wang, P. Liang, and S. Khizroev, “A theoretical study of switching energy efficiency in sub-10-nm spintronic devices,” J. Magnetism and Magnetic Materials, vol. 494, 165776, Jan 2020. doi:10.1016/j.jmmm.2019.165776.
2019
E. A. Tremsina, N. Roschewsky, and S. Salahuddin, “Micromagnetic analysis and optimization of spin-orbit torque switching processes in synthetic antiferromagnets,” Journal of Applied Physics, vol. 126, no. 16, p. 163905, Oct 2019. doi:10.1063/1.5121167.
B. Navarrete, M. Stone, K. Luongo, A. Hadjikhani, P. Wang, J. Hong, P. Liang, J. Bokor, and S. Khizroev, “Nanomagnetic particle-based information processing,” IEEE Transactions on Nanotechnology, vol. 18, pp. 983-988, Sep 2019. doi:10.1109/TNANO.2019.2939009.
Zhao, R. Wang, D.H. Lien, Y. Zhao, H. Kim, J. Cho, G.H. Ahn, and A. Javey, “Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination,” Advanced Materials, vol. 31, no 48, pp. 1900136, Sep 2019. doi:10.1002/adma.201900136.
S. Khizroev, “Technobiology’s Enabler: The Magnetoelectric Nanoparticle,” Cold Spring Harb. Perspect. Med., vol. 9, pp. a034207, Aug 2019. doi: 10.1101/cshperspect.a034207.
A. El-Ghazaly, B. Tran, A. Ceballos, C.-H. Lambert, A. Pattabi, S. Salahuddin, F. Hellman, and J. Bokor, “Ultrafast magnetization switching in nanoscale magnetic dots,” Applied Physics Letters, vol. 144, no. 23, p. 232407, Jun 2019. doi:10.1063/1.5098453.
J. Hong, X. Li, O. Lee, W. Tian, S. Khizroev, J. Bokor, and L. You, “Demonstration of spin transfer torque (STT) magnetic recording,” Applied Physics Letters, vol. 144, no. 24, p. 243101, Jun 2019. doi:10.1063/1.5097546.
X. Zhao, A. Vardi and J. A. del Alamo, “Fin-Width Scaling of Highly-Doped InGaAs Fins,” IEEE Transactions on Electron Devices, vol. 66, pp. 2563-2568, Jun 2019. doi: 10.1109/TED.2019.2912618.
A. Vidana, E. Acosta, M. Martinez, S. Almeida, J. Mireles and D. Zubia, “Exponential conductivity increase in strained MoS2 via MEMS actuation,” MRS Advances, Jun 2019, doi: 10.1557/adv.2019.282.
J. Hong, Q. Luo, S. Jung, S. Je, Y. Kim, M. Im, C. Hwang, S. Khizroev, S. Chung, and L. You, “Shape transformation and self-alignment of Fe based nanoparticles,” Nanoscale Advances, vol. 1, no. 7, pp. 2523-2528, May 2019. doi:10.1039/C9NA00146H.
N. Roschewsky, E. Walker, P. Gowtham, S. Muschinske, F. Hellman, S. Bank, and S. Salahuddin, “Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures,” Physical Review B, vol. 99, no. 19, pp. 195103-195108, May 2019. doi:10.1103/PhysRevB.99.195103.
X. Zhao, A. Vardi and J. A. del Alamo, “Excess OFF-State Current in InGaAs FinFETs: Physics of the Parasitic Bipolar Effect,” IEEE Transactions on Electron Devices, vol. 66, pp. 2113-2118, May 2019. doi: 10.1109/TED.2019.2903912.
S. Fathipour, S. F. Almeida, Z. A. Ye, B. Saha, F. Niroui, T.-J. K. Liu and J. Wu, “Reducing Adhesion Energy of Nano-Electro-Mechanical Relay Contacts by Self-Assembled Perfluoro(2,3-Dimethylbutan-2-ol) Coating,” AIP Advances, vol. 9, pp. 055329, May 2019. doi: 10.1063/1.5095760
J. Hong, T. Yang, A. N’Diaye, J. Bokor, and L. You, “Effects of Interface Induced Natural Strains on Magnetic Properties of FeRh,” Nanomaterials, vol. 9, no. 4, p. 574, Apr 2019. doi:10.3390/nano9040574.
J. Lin, X. Zhao, I. Manglano Clavero, D. A. Antoniadis and J. A. del Alamo, “A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs,” IEEE Transactions in Electron Devices, vol. 66, pp. 1208-1212, Mar 2019. doi: 10.1109/TED.2019.2891751
A. Vidaña, D. Zubia, M. Martinez, E. Acosta, J. Mireles Jr., T.-J. K. Liu and S. Almeida, “Conductivity modulation in strained transition-metal-dichalcogenides via micro-electro-mechanical actuation,” Semiconductor Science and Technology, vol. 34, pp. 045013, Mar 2019. doi: 10.1088/1361-6641/ab062d
W. S. Leong, H. Wang, J. Yeo, F. J. Martin-Martinez, A. Zubair, P.-C. Shen, Y. Mao, T. Palacios, M. J. Buehler, J.-Y. Hong and J. Kong, “Paraffin-Enabled Graphene Transfer,” Nature Communications, vol. 10, pp. 867, Feb 2019. doi: 10.1038/s41467-019-08813-x
X. Zhang, J. Grajal, U. Radhakrishna, X. Wang, W. Chern, L. Zhou, Y. Lin, P.-C. Shen, X. Ji, X. Ling, A. Zubair, Y. Zhang, H. Wang, M. Dubey, J. Kong, M. S. Dresselhaus and T. Palacios, “Two-dimensional MoS2-enabled Rectenna for Ubiquitous Energy Harvesting in the Wi-Fi Band,” Nature, vol. 566, pp. 368-372, Jan 2019. doi: 10.1038/s41586-019-0892-1
2018
P.-C. Shen, Y. Lin, H. Wang, J.-H. Park, W. S. Leong, A.-Y. Lu, T. Palacios and J. Kong, “CVD Technology for 2D Materials,” IEEE Transaction on Electronic Devices, vol. 65, pp. 4040-4052, Oct 2018. doi: 10.1109/TED.2018.2866390
N. Sato, F. Xue, R. M. White, C. Bi and S. X. Wang, “Two-terminal spin–orbit torque magnetoresistive random access memory,” Nature Electronics, vol. 1, pp. 508–511, Sep 2018. doi: 10.1038/s41928-018-0131-z
X. Zhao, C. Heidelberger, E. A. Fitzgerald, W. Lu, A. Vardi and J. A. del Alamo, “Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts,” IEEE Transactions in Electron Devices, vol. 65, pp. 3762-3768, Sep 2018. doi: 10.1109/TED.2018.2859202
Y.-L. Lee, F. Zhao, T. Cao, J. Ihm and S. G. Louie, “Topological phases in cove-edged and chevron graphene nanoribbons: Geometric structures, Ζ2 invariants, and junction states,” Nano Lett., vol. 18, pp. 7247-7253, Sep 2018. doi: 10.1021/acs.nanolett.8b03416
Gao, Q. Ji, P.-C. Shen, Y. Han, W. S. Leong, N. Mao, L. Zhou, C. Su, J. Niu, X. Ji, M. M. Goulamaly, D. A. Muller, Y. Li and J. Kong, “In-situ Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide,” ACS Appl. Mater. Interfaces, vol. 10, pp. 34401–34408, Sep 2018. doi: 10.1021/acsami.8b13428
S. Leong, Q. Ji, N. Mao, Y. Han, H. Wang, A. J. Goodman, C. Su, Y. Guo, P.-C. Shen, Z. Gao, D. A. Muller, W. A. Tisdale and J. Kong, “Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides,” J. Am. Chem. Soc., vol. 140, pp. 12354–12358, Sep 2018. doi: 10.1021/jacs.8b07806
Guduru, P. Liang, M. Yousef, J. Horstmyer, and S. Khizroev, “Electric field mapping of the brain with magnetoelectric nanoparticles,” Bioelectr. Med., vol. 4, pp.10, Aug 2018. doi: 10.1186/s42234-018-0012-9
Hong, K. Dong, J. Bokor, and L. You, “Self-assembled single-digit nanometer memory cells,” Appl. Phys. Lett., vol. 113, p. 062404, Aug 2018. doi: 10.1063/1.5033972
D. J. Rizzo, G. Veber, T. Cao, C. Bronner, T. Chen, F. Zhao, H. Rodriguez, S. G. Louie, M. F. Crommie and F. R. Fischer, “Topological band engineering of graphene nanoribbons,” Nature, vol. 560, pp. 204-208, Aug 2018. doi: 10.1038/s41586-018-0376-8
K. Yin, S. Huang, X. Chen, X. Wang, J. Kong, Y. Chen, J. Xue, “Generating Sub-nanometer Pores in Single-Layer MoS2 by Heavy-Ion Bombardment for Gas Separation: A Theoretical Perspective,” ACS Appl. Mater. Interfaces, vol. 10, pp. 28909-28917, Jul 2018. doi: 10.1021/acsami.8b10569
B. V. Senkovskiy, D. Y. Usachov, A. V. Fedorov, T. Marangoni, D. Haberer, C. Tresca, G. Profeta, V. Caciuc, S. Tsukamoto, N. Atodiresei, N. Ehlen, C. Chen, J. Avila, M. C. Asensio, A. Varykhalov, A. Nefedov, C. Wöll, T. K. Kim, M. Hoesch, F. R. Fischer and A. Grüneis, “Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint,” ACS Nano, vol. 12, pp. 7571–7582, Jul 2018. doi: 10.1021/acsnano.8b04125
M. S. Eggleston, S. B. Desai, K. Messer, S. A. Fortuna, S. Madhvapathy, J. Xiao, X. Zhang, E. Yablonovitch, A. Javey and M. C. Wu, “Ultrafast Spontaneous Emission from a Slot-Antenna Coupled WSe2 Monolayer,” ACS Photonics, vol. 5, no. 7, pp. 2701–2705, Jul 2018. doi: 10.1021/acsphotonics.8b00381
Y. Gao, A. J. Goodman, P.-C. Shen, J. Kong and W. A. Tisdale, “Phase-Modulated Degenerate Parametric Amplification Microscopy,” Nano Lett., vol. 18, pp. 5001-5006, Jun 2018. doi: 10.1021/acs.nanolett.8b01827 [Full Paper]
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B. V. Senkovskiy, D. U. Usachov, A. V. Fedorov, D. Haberer, N. Ehlen, F. R. Fischer and A. Grüneis, “Finding the Hidden Valence Band of N = 7 Armchair Graphene Nanoribbons with Angle-Resolved Photoemission Spectroscopy,” 2D Mater., vol. 5, pp. 035007, Apr 2018. doi: 10.1088/2053-1583/aabb70 [Full Paper]
K. Dong, H. S. Choe, X. Wang, H. Liu, B. Saha, C. Ko, Y. Deng, K. Tom, S. Lou, Z. You, J. Yao and J. Wu, “0.2-Volt microelectromechanical switch enabled by a phase transition,” Small, vol. 14, pp. 1703621, Apr 2018. doi: 10.1002/smll.201703621 [Full Paper]
X. Zhao, A. Vardi and J. A. del Alamo, “Excess Off-State Current In InGaAs FinFETs,” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 476-479, Apr 2018. doi: 10.1109/LED.2018.2806559 [Full Paper]
J. Hong, M. Stone, B. Navarette, K. Luongo, Z. Yuan, K. Xia, N. Xu, J. Bokor, L. You and S. Khizroev, “3D multilevel spin transfer toque devices,” Appl. Phys. Lett., vol. 112, pp. 112402, Mar 2018. doi: 10.1063/1.5021336 [Full Paper]
R. Lo Conte, Z. Xiao, C. Chen, C. V. Stan, J. Gorchon, A. El-Ghazaly, M. E. Nowakowski, H. Sohn, A. Pattabi, A. Scholl, N. Tamura, A. Sepulveda, G. P. Carman, R. N. Candler and J. Bokor, “Influence of Nonuniform Micron-Scale Strain Distributions on the Electrical Reorientation of Magnetic Microstructures in a Composite Multiferroic Heterostructure,” Nano Lett., vol. 18, pp. 1952-1961, Mar 2018. doi: 10.1021/acs.nanolett.7b05342 [Full Paper]
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T. Stewart, A. Nagesetti, R. Guduru, E. Stimphil, A. Hadjikhani, L. Salgueiro, P. Liang, J. Horstmyer, A. Schally, and S. Khizroev, “Magnetoelectric nanoparticles to deliver and release anti-tumor peptide into glioblastoma cells across blood-brain barrier via external application of d.c. and a.c. magnetic fields,” Nanomedicine (London), vol. 13, pp. 423-438, Feb 2018. doi: 10.2217/nnm-2017-0300 [Full Paper]
R. A. Durr, D. Haberer, Y.-L. Lee, R. Blackwell, A. M. Kalayjian, T. Marangoni, J. Ihm, S. G. Louie and F. R. Fischer, “Orbitally Matched Edge-Doping in Graphene Nanoribbons,” J. Am. Chem. Soc., vol. 140, pp. 807–813, Jan 2018. doi: 10.1021/jacs.7b11886 [Full Paper]
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2017
A. Vardi, J. Lin, W. Lu, X. Zhao, A. Fernando-Saavedra and J. A. del Alamo, A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs, IEEE Trans. Semiconductor Manufacturing, vol. 30, no. 4, pp. 468-474. Nov 2017. doi: 10.1109/TSM.2017.2753141 [Full Paper]
Y. Yang, R. Wilson, J. Gorchon, C.-H. Lambert, S. Salahuddin and J. Bokor, Ultrafast Magnetization Reversal by Picosecond Electrical Pulses, Science Advances, vol. 3, no. 11, pp. E1603117 Nov 2017. doi: 10.1126/sciadv.1603117 [Full Paper]
J. P. Llinas, A. Fairbrother, G. Borin Barin, W. Shi, K. Lee, S. Wu, B. Yong Choi, R. Braganza, J. Lear, N. Kau, W. Choi, C. Chen, Z. Pedramrazi, T. Dumslaff, A. Narita, X. Feng, K. Mullen, F. Fischer, A. Zettl, P. Ruffieux, E. Yablonovitch, M. Crommie, R. Fasel, and J. Bokor, Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons, Nat Commun, vol. 8, pp. 633, Sept 2017. doi: 10.1038/s41467-017-00734-x [Full Paper]
T. Cao, F. Zhao, and S. G. Louie, Topological Phases in Graphene Nanoribbons: Junction States, Spin Centers, and Quantum Spin Chains, Physical Review Letters, vol.119, no. 7-18, pp. 076401, Aug 2017. doi: 10.1103/PhysRevLett.119.076401 [Full Paper]
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J. Lin, X. Cai, D. Antoniadis, and J. A. del Alamo, The Importance of Ballistic Resistance in the Modeling of Nanoscale InGaAs MOSFETs, IEEE Electron Device Lett., vol. 38, no. 7, pp. 851-854, Jul 2017. doi: 10.1109/LED.2017.2700385 [Full Paper]
X. Zhao, A. Vardi and J. A. del Alamo, Sub-Thermal Subthreshold Characteristics in Top-down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs, IEEE Electron Device Lett., vol. 38, no. 7, pp. 855-858, Jul 2017. doi: 10.1109/LED.2017.2702612 [Full Paper]
J. Gorchon, C.-H. Lambert, Y. Yang, A. Pattabi, R. B. Wilson, S. Salahuddin, and J. Bokor, Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers, Appl. Phys.Lett., vol.111, pp. 042401, Jul 2017. doi: 10.1063/1.4994802 [Full Paper]
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F. Lu, I. Bhattacharya, H. Sun, T.-T. Tran, K. Ng, G. Malheiros-Silveira, and C. Chang-Hasnain, Nanopillar Quantum well lasers directly grown on silicon w and emitting at silicon-transparent wavelengths, Optica, vol. 4, no.7, pp. 717-723, Jun 2017. doi: 10.1364/OPTICA.4.000717 [Full Paper]
K. Settaluri, C. Lalau-Keraly, E. Yablonovitch, and V. Stojanović, First Principles Optimization of Opto-Electronic Communication Links, IEEE Transactions on Circuits and Systems I: Regular Papers , vol.64, no.5, pp. 1270-1283, May 2017. doi: 10.1109/TCSI.2016.2633942 [Full Paper]
A. Nagesetti, A. Rodzinski, E. Stimphil, T. Stewart, C. Khanal, P. Wang, R. Guduru, P. Liang, I. Agoulnik, J. Horstmyer, and S. Khizroev, Multiferroic coreshell magnetoelectric nanoparticles as NMR sensitive nanoprobes for cancer cell detection, Scientific Reports, vol. 7, no. 1610, May 2017. doi: 10.1038/s41598-017-12311-9 [Full Paper]
W. Lu, X. Zhao, D. Choi, S. El Kazzi and J. A. del Alamo, Alcohol-Based Digital Etch for III-V Vertical Nanowires Sub-10 nm Diameter, IEEE Electron Device Lett., vol. 38, no. 5, pp. 548-551, May 2017. doi: 10.1109/LED.2017.2690598 [Full Paper]
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R. Wilson, J. Gorchon, Y. Yang, C-H. Lambert, S. Salahuddin, and J. Bokor, Ultrafast magnetic switching of GdFeCo with electronic heat currents, Physical Review B, vol. 95, no. 18 pp.180409 May 2017. doi: 10.1103/PhysRevB.95.180409 [Full Paper]
D. J. Connelly and T.-J. K. Liu, Modeling nanoelectromechanical switches with random surface roughness, IEEE Trans. Electron Dev., vol. 64, no. 5, pp. 2409-2416, Apr 2017. doi: 10.1109/TED.2017.2682644 [Full Paper]
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G. Malheiros-Silveira, F. Lu, I. Bhattacharya, T.-T. Tran, H. Sun, and C. Chang-Hasnain, III–V Compound Semiconductor Nanopillars Monolithically Integrated to Silicon Photonics, ACS Photonics, vol. 4, no. 5, pp. 1021-1025, Apr 2017. doi: 10.1021/acsphotonics.6b01035 [Full Paper]
T. Theis and H.-S. P. Wong, The End of Moore’s Law: A New Beginning for Information Technology, IEEE Computing in Science & Engineering, vol. 19, no. 2, pp. 41-50, Mar-Apr 2017. doi: 10.1109/MCSE.2017.29 [Full Paper]
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2016
D. Chen, Z. Chen, Q. He, J. Clarkson, C. Serrao, A. Yadav, M. Nowakowski, Z. Fan, L. You, X. Gao, D. Zeng, L. Chen, A. Borisevich, S. Salahuddin, J.-M. Liu, and J. Bokor, Interface Engineering of Domain Structures in BiFeO3 Thin Films, Nano Letters, vol. 17, no. 1, pp. 486-493, Dec 2016. doi: 10.1021/acs.nanolett.6b04512 [Full Paper]
K. Kato, V. Stojanović, and T.-J. King Liu, Embedded Nano-Electro-Mechanical Memory for Energy-Efficient Reconfigurable Logic, IEEE Electron Device Lett., vol. 37, no. 12, pp. 1563-1565, Dec 2016. doi: 10.1109/LED.2016.2621187 [Full Paper]
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A. Vardi and J.A. del Alamo, Sub-10 nm Fin-Width Self-Aligned InGaAs FinFETs, IEEE Electron Device Lett, vol. 37, no. 9, pp. 1104-1107, Sept 2016. doi: 10.1109/LED.2016.2596764 [Full Paper]
W. S. Ko, I. Bhattacharya, T-T. D. Tran, K. W. Ng, S. Gerke, and C. Chang-Hasnain, Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon, Sci. Rep., vol. 6, no. 33368, Sept 2016. doi: 10.1038/srep33368 [Full Paper]
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T. Marangoni T, D. Haberer, D.J. Rizzo, R.R. Cloke, and F.R. Fischer, Heterostructures through Divergent Edge Reconstruction in Nitrogen-Doped Segmented Graphene Nanoribbons, Chem. Eur. J., vol. 22, no. 37, pp. 13037-13040, Aug 2016. doi: 10.1002/chem.201603497 [Full Paper]
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2012
S. Chuang, Q. Gao, R. Kapadia, A. C. Ford, J. Guo, and A. Javey, Ballistic InAs Nanowire Transistors, Nano Lett., vol. 13, no. 2, pp 555–558, 2012. doi: 10.1021/nl3040674 [Full Paper]
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2011
J.T. Heron, M. Trassin, K. Ashraf, M. Gajek, Q. He, S.Y. Yang, D.E. Nikonov, Y.H. Chu, S. Salahuddin, and R. Ramesh, Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure, Phys. Rev. Lett., vol. 107, no. 21, pp. 217202-217206, 2011. [Full Paper]
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H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. W. Leu, K. Ganapathi, E. Plis, H. S. Kim, S.-Y. Chen, M. Madsen, A. C. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin, and A. Javey, Ultrathin Compound Semiconductor on Insulator Layers for High Performance Nanoscale Transistors, Nature, vol. 468, pp. 286-289, 2010. [Full Paper]
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