About E3S
The Center for Energy Efficient Electronics Science (E3S) is a Science and Technology Center (STC) funded by the U. S. National Science Foundation, and is a consortium of world class academic institutions.
We are working in a collaborative and innovative environment to make fundamental and conceptual breakthroughs in the underlying physics, chemistry, and materials science of electronic systems, breakthroughs needed to reduce these systems’ energy consumption by orders of magnitude.
Upcoming Events
October 19-20
5th Berkeley Symposium:
Energy Efficient Electronic Systems and Steep Transistors Workshop
Fall 2017
E3S Research Seminars
See the complete schedule of all upcoming seminars for the Fall 2017 semester.
@Center_E3S
Publications
R.B. Wilson, J. Gorchon, Y. Yang, C.-H. Lambert, S. Salahuddin, and J. Bokor, Ultrafast magnetic switching of GdFeCo with electronic heat currents, Physical Review B, vol. 95, pp.180409, May 2017. doi: 10.1103/PhysRevB.95.180409
X. Zhao, C. Heidelberger, E. Fitzgerald, and J. del Alamo, Source/drain Asymmetry in InGaAs Vertical Nanowire MOSFETs, IEEE Trans. Electron Dev., vol. 64, pp. 2161–2165, April 2017. doi: 10.1109/TED.2017.2684707
D. Chen, Z. Chen, Q. He, J. Clarkson, C. Serrao, A. Yadav, M. Nowakowski, Z. Fan, L. You, X. Gao, D. Zeng, L. Chen, A. Borisevich, S. Salahuddin, J.-M. Liu, and J. Bokor, Interface Engineering of Domain Structures in BiFeO3 Thin Films, Nano Letters, pp.486-493, Jan 2017. doi: 10.1021/acs.nanolett.6b04512
P. Zheng, S.W. Kim, D. Connelly, K. Kato, F. Ding, L. Rubin, and T.-J. King Liu, Sub-Lithographic Patterning via Tilted Ion Implantation for Scaling beyond the 7 nm Technology Node, IEEE Trans. Electron Dev., vol. 64, no. 1, pp. 231-236, Jan 2017. doi: 10.1109/TED.2016.2622284
W.J. Ong, F. Bertani, E. Dalcanale, and T.M. Swager, Redox Switchable Thianthrene-Cavitands, Synthesis, vol. 49, no. 2, pp. 358-364, Jan 2017. doi: 10.1055/s-0036-1588659
C. Heidelberger and E. Fitzgerald, GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD, Journal of Applied Physics, vol. 121, pp. 045703-1–045703-6, Jan 2017. doi: 10.1063/1.4974969
